Hopping conduction in heavily doped bulk n-type SiC

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 113-118

  Mitchel, W C ^a   Evwaraye, A O ^a,b   Smith, S R ^a,c   Roth, M D ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

Admittance spectroscopy; Hall effect; Hopping conduction; Silicon carbide

Indexed keywords

EID: 0039969793     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0135-3     Document Type: Article

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