Electrical activation of the ion-implanted phosphorus in 4H-SiC by excimer laser annealing

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 5934-5936

  Tanaka, Yasunori ^a   Tanoue, Hisao ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EXCIMER LASERS; ION IMPLANTATION; LASER BEAM EFFECTS; PHOSPHORUS; SILICON CARBIDE;

ELECTRICAL ACTIVATION;

ANNEALING;

EID: 0038624471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565190     Document Type: Article

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