In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3368-3370

  Russell, S D ^a   Ramirez, A D ^a  

^a Naval Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADDITION REACTIONS; BORON COMPOUNDS; COMPOSITION EFFECTS; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; POINT CONTACTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; X RAY ANALYSIS;

BORON TRIFLUORIDE;

SILICON CARBIDE;

EID: 0032607449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123347     Document Type: Article

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