SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 1-3, 2007, Pages

Hydrogen-controlled crystallinity of 3C-SiC film on Si(001) grown with monomethylsilane

(7) Narita, Yuzuru a,d Konno, Atsushi a Nakazawa, Hideki b Itoh, Takashi a Yasui, Kanji c Endoh, Tetsuo a Suemitsu, Maki a

a TOHOKU UNIVERSITY (Japan)

b HIROSAKI UNIVERSITY (Japan)

c NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

d KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Hydrogen adsorption desorption; Monomethylsilane; Phase diagram; Si(001); Silicom carbide

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; PHASE DIAGRAMS;

HYDROGEN ADSORPTION; MONOMETHYLSILANE; SINGLE ANALYTICAL FUNCTION;

SILICON CARBIDE;

EID: 34247633345 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L40 Document Type: Article

Times cited : (12)

References (26)

1
- 26444532853
- T. Kimoto, H. Kawano, and J. Suda: IEEE Electron Device Lett. 26 (2005) 649.
- (2005) IEEE Electron Device Lett , vol.26 , pp. 649
- Kimoto, T.¹ Kawano, H.² Suda, J.³

2
- 8644266000
- K. Adachi, H. Ohashi, and K. Arai: Mater. Sci. Forum. 457-460 (2004) 1233.
- (2004) Mater. Sci. Forum , vol.457-460 , pp. 1233
- Adachi, K.¹ Ohashi, H.² Arai, K.³

3
- 0009703098
- C. F. Lin, H. C. Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. M. Hong, and C. Y. Chen: J. Appl. Phys. 82 (1997) 2378.
- (1997) J. Appl. Phys , vol.82 , pp. 2378
- Lin, C.F.¹ Cheng, H.C.² Chi, G.C.³ Feng, M.S.⁴ Guo, J.D.⁵ Hong, J.M.⁶ Chen, C.Y.⁷

4
- 0013500857
- J. Lu, L. Haworth, D. I. Westwood, and J. E. Macdonald: Appl. Phys. Lett. 78 (2001) 1080.
- (2001) Appl. Phys. Lett , vol.78 , pp. 1080
- Lu, J.¹ Haworth, L.² Westwood, D.I.³ Macdonald, J.E.⁴

5
- 1842722885
- H. Nagasawa, T. Kawahara, and K. Yagi: Mater. Sci. Forum 389-393 (2002) 319.
- (2002) Mater. Sci. Forum , vol.389-393 , pp. 319
- Nagasawa, H.¹ Kawahara, T.² Yagi, K.³

6
- 31544454172
- Y. Sun and T. Miyasato: Jpn. J. Appl. Phys. 44 (2005) 7351.
- (2005) Jpn. J. Appl. Phys , vol.44 , pp. 7351
- Sun, Y.¹ Miyasato, T.²

7
- 19944411202
- K. Yasui, J. Eto, Y. Narita, M. Takata, and T. Akahane: Jpn. J. Appl. Phys. 44 (2005) 1361.
- (2005) Jpn. J. Appl. Phys , vol.44 , pp. 1361
- Yasui, K.¹ Eto, J.² Narita, Y.³ Takata, M.⁴ Akahane, T.⁵

8
- 11144220790
- N. Kubo, T. Kawase, S. Asahina, N. Kanayama, H. Tsuda, A. Moritani, and K. Kitahara: Jpn. J. Appl. Phys. 43 (2004) 7654.
- (2004) Jpn. J. Appl. Phys , vol.43 , pp. 7654
- Kubo, N.¹ Kawase, T.² Asahina, S.³ Kanayama, N.⁴ Tsuda, H.⁵ Moritani, A.⁶ Kitahara, K.⁷

9
- 33747502586
- S. Nishino, J. Powell, and H. A. Will: Appl. Phys. Lett. 42 (1983) 460.
- (1983) Appl. Phys. Lett , vol.42 , pp. 460
- Nishino, S.¹ Powell, J.² Will, H.A.³

10
- 0035873639
- K. Yasui, K. Asada, T. Moeda, and T. Akahane: Appl. Surf. Sci. 175-176 (2001) 495.
- (2001) Appl. Surf. Sci , vol.175-176 , pp. 495
- Yasui, K.¹ Asada, K.² Moeda, T.³ Akahane, T.⁴

11
- 0034226610
- H. Nakazawa, M. Suemitsu, and S. Asami: Thin Solid Films 369 (2000) 269.
- (2000) Thin Solid Films , vol.369 , pp. 269
- Nakazawa, H.¹ Suemitsu, M.² Asami, S.³

12
- 0029632350
- Y. Ohshita: J. Cryst. Growth 147 (1995) 111.
- (1995) J. Cryst. Growth , vol.147 , pp. 111
- Ohshita, Y.¹

13
- 0001627677
- C. W. Liu and J. C. Sturm: J. Appl. Phys. 82 (1997) 4558.
- (1997) J. Appl. Phys , vol.82 , pp. 4558
- Liu, C.W.¹ Sturm, J.C.²

14
- 0039782253
- H. Nakazawa and M. Suemitsu: Appl. Phys. Lett. 79 (2001) 755.
- (2001) Appl. Phys. Lett , vol.79 , pp. 755
- Nakazawa, H.¹ Suemitsu, M.²

15
- 4244041341
- K. Yasui, M. Hashiba, Y. Narita, and T. Akahane: Mater. Sci. Forum. 389-3 (2002) 367.
- (2002) Mater. Sci. Forum , vol.389 -3 , pp. 367
- Yasui, K.¹ Hashiba, M.² Narita, Y.³ Akahane, T.⁴

16
- 0033098324
- S. Madapura, A. J. Steckl, and M. Lobada: J. Electrochem. Soc. 146 (1999) 1197.
- (1999) J. Electrochem. Soc , vol.146 , pp. 1197
- Madapura, S.¹ Steckl, A.J.² Lobada, M.³

17
- 0032653266
- H. Hurtos, J. Rodriguez-Viejo, J. Bassas, M. T. Clavaguera-Mora, and K. Zekentes: Mater. Sci. Eng. B 61-62 (1999) 549.
- (1999) Mater. Sci. Eng. B , vol.61-62 , pp. 549
- Hurtos, H.¹ Rodriguez-Viejo, J.² Bassas, J.³ Clavaguera-Mora, M.T.⁴ Zekentes, K.⁵

18
- 0030085243
- C. H. Wu, C. Jacob, X. J. Ning, S. Nishino, and P. Pirouz: J. Cryst. Growth 158 (1996) 480.
- (1996) J. Cryst. Growth , vol.158 , pp. 480
- Wu, C.H.¹ Jacob, C.² Ning, X.J.³ Nishino, S.⁴ Pirouz, P.⁵

19
- 0036531048
- K. Yasui, Y. Narita, T. Inubushi, and T. Akahane: J. Cryst. Growth 237 (2002) 1254.
- (2002) J. Cryst. Growth , vol.237 , pp. 1254
- Yasui, K.¹ Narita, Y.² Inubushi, T.³ Akahane, T.⁴

20
- 0037566728
- H. Nakazawa and M. Suemitsu: J. Appl. Phys. 93 (2003) 5282.
- (2003) J. Appl. Phys , vol.93 , pp. 5282
- Nakazawa, H.¹ Suemitsu, M.²

21
- 0034248424
- H. Nakazawa and M. Suemitsu: Appl. Surf. Sci. 162-163 (2000) 139.
- (2000) Appl. Surf. Sci , vol.162-163 , pp. 139
- Nakazawa, H.¹ Suemitsu, M.²

22
- 0023031487
- H. Koinuma, M. Funabashi, K. Kishio, M. Kawasaki, T. Hirano, and K. Fueki: Jpn. J. Appl. Phys. 25 (1986) 1811.
- (1986) Jpn. J. Appl. Phys , vol.25 , pp. 1811
- Koinuma, H.¹ Funabashi, M.² Kishio, K.³ Kawasaki, M.⁴ Hirano, T.⁵ Fueki, K.⁶

23
- 0035873459
- M. Shinohara, Y. Kimura, D. Shoji, and M. Niwano: Appl. Surf. Sci. 175-176 (2001) 591.
- (2001) Appl. Surf. Sci , vol.175-176 , pp. 591
- Shinohara, M.¹ Kimura, Y.² Shoji, D.³ Niwano, M.⁴

24
- 0038070362
- Y. Narita, T. Inubushi, M. Harashima, K. Yasui, and T. Akahane: Appl. Surf. Sci. 216 (2003) 575.
- (2003) Appl. Surf. Sci , vol.216 , pp. 575
- Narita, Y.¹ Inubushi, T.² Harashima, M.³ Yasui, K.⁴ Akahane, T.⁵

25
- 3042558195
- M. Harashima, K. Yasui, and T. Akahane: Nanotechnology 15 (2004) S406.
- (2004) Nanotechnology , vol.15
- Harashima, M.¹ Yasui, K.² Akahane, T.³

26
- 0040403998
- H. Nakazawa, M. Suemitsu, and S. Asami: Mater. Sci. Forum 338-342 (1999) 269.
- (1999) Mater. Sci. Forum , vol.338-342 , pp. 269
- Nakazawa, H.¹ Suemitsu, M.² Asami, S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.