Initial stage of 3C-SiC growth on Si(0 0 1)-2 × 1 surface using monomethylsilane

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 575-579

  Narita, Yuzuru ^a   Inubushi, Toshikazu ^a   Harashima, Masayuki ^a   Yasui, Kanji ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

3C SiC; AFM; Dimethylsilane; Initial stage of growth; Monomethylsilane; RHEED

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; GROWTH (MATERIALS); IMAGE ANALYSIS; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SILICON CARBIDE; SUBSTRATES; SURFACES;

INITIAL GROWTH;

SURFACE CHEMISTRY;

EID: 0038070362     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00441-0     Document Type: Conference Paper

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