Epitaxial growth of 3C-SiC on Si(111) using hexamethyldisilane and tetraethylsilane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7654-7660

  Kubo, Naoki ^a   Kawase, Takeshi ^b   Asahina, Shuichi ^c   Kanayama, Nobuyuki ^c   Tsuda, Hiroshi ^d   Moritani, Akihiro ^a   Kitahara, Kuninori ^a  

^a SHIMANE UNIVERSITY   (Japan)

^b SUMITOMO OSAKA CEMENT CO LTD   (Japan)

^c SHIMANE INSTITUTE FOR INDUSTRIAL TECHNOLOGY   (Japan)

^d Osaka Prefecture University   (Japan)

Author keywords

3C SiC; Carbon; MOCVD; Organosilane; SiC Si interface; Surface morphology

Indexed keywords

CARBON; CARBONIZATION; DIFFUSION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILANES;

3C-SIC; HEXAMETHYLDISILANES (HMDS); ORGANOSILANES; SIC/SI INTERFACES; TETRAETHYLSILANES (TES);

SILICON CARBIDE;

EID: 11144220790     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7654     Document Type: Article

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