Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Applied Surface Science

Volumn 175, Issue 176, 2001, Pages 495-498

  Yasui, Kanji ^a   Asada, Kunio ^a   Maeda, Tomohiro ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Activation energy; Monomethylsilane; Silicon carbide; Triode plasma CVD

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICON CARBIDE; SINGLE CRYSTALS;

MONOMETHYLSILANE;

SEMICONDUCTING FILMS;

EID: 0035873639     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00109-X     Document Type: Article

References (7)

1. Takeuchi T., Amano H., Hiramatsu K., Akasaki I. J. Non-Cryst. Solids. 115:1991;634.
2. Matsuda A., Kaga T., Tanaka H., Tanaka K. J. Non-Cryst. Solids. 59/60:1983;687.
3. Yasui K., Kimura M., Sanada K., Akahane T. Appl. Surf. Sci. 142:1999;381.
4. Ohshita Y. J. Electrochem. Soc. 142:1995;1002.
5. Allendorf M.D., Outka D.A. Surf. Sci. 258:1991;177.
6. Johnson A.D., Perrin J., Mucha J.A., Ibbotson D.E. J. Phys. Chem. 97:1993;12937.
7. Nakazawa H., Suemitsu M., Asami S. Abst. Int. Conf. Silicon Carbide Related Mater. 1999:1999;265.