Gas-source MBE of SiC/Si using monomethylsilane

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 269-272

  Nakazawa, Hideki ^a   Suemitsu, Maki ^a   Asami, Seiji ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACES; X RAY CRYSTALLOGRAPHY;

GAS-SOURCE MOLECULAR BEAM EPITAXY; HETEROEPITAXY; MONOMETHYLSILANE;

SILICON WAFERS;

EID: 0034226610     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00821-X     Document Type: Article

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