Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5282-5286

  Nakazawa, Hideki ^a,b   Suemitsu, Maki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HIROSAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; QUASICRYSTALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SUBSTRATES; SURFACE TREATMENT;

ANTIPHASE BOUNDARIES (APB); SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0037566728     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564861     Document Type: Article

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