The theoretical study on total power dissipation of SiC devices in comparison with si devices

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1233-1236

  Adachi, K ^a   Ohashi, H ^a,b   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

4h sic; Power dissipation; Power electronics; Si; Uni polar power device

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; FUNCTIONS; OPTIMIZATION; POWER ELECTRONICS; SWITCHING;

4H-SIC; ON-STATE LOSS; POWER DISSIPATION; UNI-POLAR POWER DEVICE;

SILICON CARBIDE;

EID: 8644266000     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (3)

1. ds in High-Frequency Operation in comparison with Si", Conf. of Society for the study of SiC and Related Wide bandgap Semiconductor, Nov.2002, Japan
2. A.Nakagawa, "Theoretical and Practical Comparison of SiC and Silicon Power Devices", Conf. of Jap. of Appl. Phy., Mar. 2003, Japan
3. M.Tsukuda, I.Omura, et al, "High-Voltage Power MOSFETs under a few MHz Switching", Inst. of Elec. Eng. of Jap., Conf. of Ind. Appl., Aug.2003, Japan