In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1254-1259

  Yasui, Kanji ^a   Narita, Yuzuru ^a   Inubushi, Toshikazu ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Surface processes; A1. Surface structure; B2. Semiconducting silicon compounds

Indexed keywords

REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; SURFACE STRUCTURE;

HETEROEPITAXY;

EPITAXIAL GROWTH;

EID: 0036531048     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02231-X     Document Type: Article

References (14)