Low-temperature heteroepitaxial growth of SiC on (100) Si using hot-mesh chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 3, 2005, Pages 1361-1364

  Yasui, Kanji ^a   Eto, Jyunpei ^a   Narita, Yuzuru ^a   Takata, Masasuke ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth; FTIR; Hot mesh CVD; Silicon carbide; Tungsten mesh; XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; SILANES; SUBSTRATES; TUNGSTEN; X RAY DIFFRACTION;

ELECTRON SATURATION; EPITAXIAL FILMS; HOT-MESH CVD; TUNGSTEN MESH;

SILICON CARBIDE;

EID: 19944411202     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1361     Document Type: Article

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