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Volumn 389-393, Issue 1, 2002, Pages 367-370
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Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD
a
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Author keywords
3C SiC; Dimethysilane; Low pressure CVD; Triode plasma CVD
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Indexed keywords
ACTIVATION ENERGY;
EPITAXIAL GROWTH;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
THIN FILMS;
TRIODES;
PLASMA CVD;
SILICON CARBIDE;
DIMETHYLSILANE (DMS);
MONOMETHYLSILANE (MMS);
TRIODE PLASMA;
3C-SIC;
DIMETHYLSILANE;
DIMETHYSILANE;
GROWTH CHARACTERISTIC;
HYDROGEN RADICAL;
LOW PRESSURE CVD;
MONOMETHYLSILANE;
SI SUBSTRATES;
SILICON CARBIDE;
GROWTH RATE;
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EID: 4244041341
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.367 Document Type: Article |
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Times cited : (5)
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References (8)
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