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Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 549-552

Low temperature SiC growth by metalorganic LPCVD on MBE carbonized Si (001) substrates

(5) Hurtos E a Rodriguez Viejo J a Bassas, J b Clavaguera Mora, M T a Zekentes, K c

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b UNIVERSITY OF BARCELONA (Spain)

c INSTITUTE OF COMPUTER SCIENCE (Greece)

Author keywords

Buffer layer; Crystal growth; CVD; SiC

Indexed keywords

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

CARBONIZATION; CRYSTAL ORIENTATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032653266 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(98)00471-1 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.