The characterization of an Si(001)-c(4 × 4) structure formed using monomethylsilane

Nanotechnology

Volumn 15, Issue 6, 2004, Pages

  Harashima, Masayuki ^a   Yasui, Kanji ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL LATTICES; DEPOSITION; DIMERS; NUCLEATION; SCANNING TUNNELING MICROSCOPY;

ORGANOSILICON COMPOUNDS; PRECURSORS; VOIDS;

SILICON COMPOUNDS;

EID: 3042558195     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/6/017     Document Type: Conference Paper

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