Low threshold-14 W/mm ZrO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 4985-4987

  Rai, Shiva ^a   Adivarahan, Vinod ^a   Tipirneni, Naveen ^a   Koudymov, Alexei ^a   Yang, Jinwei ^a   Simin, Grigory ^a   Khan, Muhammad Asif ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

AIGaN GaN; E beam evaporation; Field plate; Gate leakage current; Threshold voltage; Zirconium dioxide

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON BEAMS; FIELD EFFECT SEMICONDUCTOR DEVICES; LEAKAGE CURRENTS; MOS DEVICES; THRESHOLD VOLTAGE;

AIGAN/GAN; E-BEAM EVAPORATION; FIELD-PLATE; GATE LEAKAGE CURRENT; ZIRCONIUM DIOXIDE;

ZIRCONIUM COMPOUNDS;

EID: 33745256033     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4985     Document Type: Article

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