Dielectric constant and current transport for HfO2 thin films on ITO

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 2, 2005, Pages 285-288

  Jones, M N ^a   Kwon, Y W ^a   Norton, D P ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION; THIN FILMS;

BANDGAP; GATE DIELECTRICS; INDIUM TIN OXIDE (ITO); SCHOTTKY EMISSIONS (SE);

HAFNIUM COMPOUNDS;

EID: 18844408858     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-005-3208-2     Document Type: Article

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