Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1876-1881

  Heidelberger, G ^a   Bernat J ^a   Fox, A ^a   Marso, M ^a   Luth H ^a   Gregusova D ^b   Kordos P ^b,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMAL COMPARABILITY; UNPASSIVATED DEVICES;

ALUMINUM NITRIDE; ELECTRODES; GALLIUM NITRIDE; GATES (TRANSISTOR); PASSIVATION; SILICA; WSI CIRCUITS;

MOSFET DEVICES;

EID: 33745030836     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565249     Document Type: Article

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