InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors

Journal of Electronic Materials

Volumn 36, Issue 2, 2007, Pages 99-104

  Bennett, Brian R ^a   Boos, J Brad ^a   Ancona, Mario G ^a   Papanicolaou, N A ^a   Cooke, Graham A ^b   Kheyrandish, H ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CSMA MATS   (United Kingdom)

Author keywords

AlGaSb; FET; High electron mobility transistors (HEMTs); InAlSb; InAs; Molecular beam epitaxy (MBE)

Indexed keywords

BARRIER LAYERS; GATE LENGTH;

ALUMINUM ALLOYS; CARRIER CONCENTRATION; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SHEET RESISTANCE;

HETEROJUNCTIONS;

EID: 33947594318     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0057-5     Document Type: Article

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