0.1μm AlSb/InAs HEMTs with InAs subchannel

Electronics Letters

Volumn 34, Issue 15, 1998, Pages 1525-1526

  Boos, J B ^a   Yang, M J ^a   Bennett, B R ^a   Park, D ^a   Kruppa, W ^a   Yang, C H ^b   Bass, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

CHARGE CONTROL; CURRENT-GAIN CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032116279     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981064     Document Type: Article

References (7)

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2. WANG, F.C., ZHANG, W.E., YANG, C.H., YANG, M.J., and BENNETT, B.R.: 'Observation of electrically resettable negative persistent photoconductivity in InAs/AlSb single quantum wells', Appl. Phys. Lett., 1996, 69, (10), pp. 1417-1419
3. BENNETT, B.R., YANG, M.J., SHANABROOK, B.V., BOOS, J.B., and PARK, D.: 'Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers', Appl. Phys. Lett., 1998, 72, (10), pp. 1193-1195
4. ZHAO, Y., JURKOVIC, M.J., and WANG, W.I.: 'Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel', IEEE Trans. Electron Devices, 1998, 45, (1), pp. 341-342
5. BOOS, J.B., KRUPPA, W., PARK, D., BENNETT, B.R., BASS, R., YANG, M.J., and SHANABROOK, B.V.: 'Low-voltage, high-speed AlSb/InAs HEMTs'. Proc. Tenth Int. Conf. IPRM, 1998, pp. 671-674
6. ENOKI, T., ARAL, K., KOHZEN, A., and ISHII, Y.: 'Design and characteristics of InGaAs/InP composite-channel HFETY's', IEEE Trans. Electron Devices, 1995, 42, (8), pp. 1413-1418
7. BOOS, J.B., KRUPPA, W., PARK, D., BENNETT, B.R., and BASS, R.: 'DC, small-signal, and noise characteristics of 0.1μm AlSb/InAs HEMTs'. Proc. Ninth Int. Conf. IPRM, 1997, pp. 193-196