Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 534-535

  Sugiyama, Hiroki ^a   Yokoyama, Haruki ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Delta doping; Diffusion; HEMT; InAlAs; InP; MOVPE; SI

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; THERMAL DIFFUSION;

DELTA DOPING; FULL WIDTHS AT HALF MAXIMUM (FWHM); INALAS; INP;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2142811604     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.534     Document Type: Article

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