InAs HEMT narrowband amplifier with ultra-low power dissipation

Electronics Letters

Volumn 42, Issue 12, 2006, Pages 688-690

  Kruppa, W ^a   Boos, J B ^a   Bennett, B R ^a   Papanicolaou, N A ^a   Park, D ^a   Bass, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC BATTERIES; ELECTRIC LINES; HIGH ELECTRON MOBILITY TRANSISTORS; SERVICE LIFE;

INAS HEMT NARROWBAND AMPLIFIER; INAS-CHANNEL HEMT; RT/DUROID CIRCUIT BOARD; S-BAND;

AMPLIFIERS (ELECTRONIC);

EID: 33745072805     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061107     Document Type: Article

References (5)

1. Boos, J.B., Kruppa, W., Bennett, B.R., Park, D., Kirchoefer, S.W., Bass, R., and Dietrich, H.B.: ' AlSb/InAs HEMTs for low-voltage, high-speed applications ', IEEE Trans. Electron Devices, 1998, 45, (9), p. 1869-1875
2. Bennett, B.R., Magno, R., Boos, J.B., Kruppa, W., and Ancona, M.G.: ' Antimonide-based compound semiconductors for electronic devices: a review ', Solid-State Electron., 2005, 49, (12), p. 1875-1895
3. Weaver, B.D., Boos, J.B., Papanicolaou, N.A., Bennett, B.R., Park, D., and Bass, R.: ' High radiation tolerance of InAs/AlSb high-electron mobility transistors ', Appl. Phys. Lett., 2005, 87, p. 173501
4. Hacker, J.H., Bergman, J., Nagy, G., Sullivan, G., Kadow, C., Lin, H.K., Gossard, A.C., Rodwell, M., and Brar, B.: ' An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier ', IEEE Microw. Wirel. Compon. Lett., 2004, 14, (4), p. 156-158
5. Deal, W.R., Tsai, R., Lange, M., Boos, J.B., Bennett, B.R., and Gutierrez, A.: ' A W-band InAs/AlSb low-noise/low-power amplifier ', IEEE Microw. Wirel. Compon. Lett., 2005, 15, (4), p. 208-210