n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 151-158

  Kadow, C ^a   Dahlstrom M ^b   Bae, J U ^a   Lin, H K ^a   Gossard, A C ^a   Rodwell, M J W ^a   Brar, B ^c   Sullivan, G J ^c   Nagy, G ^c   Bergman, J I ^c  

^a Santa Barbara   (United States)

^b IBM   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Antimonides; Heterojunction field effect transistor (HFET); Millimeter wave transistor; Molecular beam epitaxy

Indexed keywords

CAPACITANCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; LEAKAGE CURRENTS; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ANTIMONIDES; HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET); MILLIMETER WAVE TRANSISTOR; SELF ALIGNED RECESS GATE TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 19944431330     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.842534     Document Type: Article

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