50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 784-786

  Elgaid, K ^a   McLelland, H ^a   Holland, M ^a   Moran, D A J ^a   Stanley, C R ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

High electron mobility transistor (HEMT); Low noise; Metamorphic; Metamorphic high electron mobility transistor (mHEMT); Millimeter wave imaging; Nanometer gates; Short gate

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; ETCHING; GATES (TRANSISTOR); METALLIZING; MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

MESA ISOLATION; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMTS); MILLIMETER WAVE IMAGING; NANOMETER GATES; NOISE FIGURE; WET CHEMICAL ETCH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27744593795     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857716     Document Type: Article

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