Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 1, 2006, Pages 40-42

  Riemer, Paul J ^a,b   Buhrow, Benjamin R ^b   Hacker, Jonathan B ^a,c   Bergman, Joshua ^a,c   Brar, Berinder ^a,c   Gilbert, Barry K ^a,b   Daniel, Erik S ^a,b  

^a IEEE   (United States)

^b MAYO CLINIC   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS); High electron mobility transistor (HEMT); InAs AlSb; Low noise amplifier (LNA); W band

Indexed keywords

ANTIMONIDE-BASED COMPOUND SEMICONDUCTORS (ABCS); INAS/ALSB; LOW-NOISE AMPLIFIERS (LNA); W-BAND;

GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

POWER AMPLIFIERS;

EID: 30344469406     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.861343     Document Type: Article

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