Growth of InAsSb-channel high electron mobility transistor structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1441-1444

  Tinkham, B P ^a   Bennett, B R ^a   Magno, R ^a   Shanabrook, B V ^a   Boos, J B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); ROOM TEMPERATURE;

CARRIER CONCENTRATION; ELECTRON MOBILITY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSPORT PROPERTIES;

TRANSISTORS;

EID: 28044452303     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1941147     Document Type: Review

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