Controlled n-type doping of antimonides and arsenides using GaTe

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 532-537

  Bennett, Brian R ^a   Magno, R ^a   Papanicolaou, N ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials; B2. Semiconducting quaternary alloys

Indexed keywords

CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

SEMICONDUCTING QUATERNARY ALLOYS;

SEMICONDUCTOR GROWTH;

EID: 0037382749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02186-3     Document Type: Conference Paper

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