Materials growth for InAs high electron mobility transistors and circuits

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 688-694

  Bennett, Brian R ^a   Tinkham, Brad P ^a   Boos, J Brad ^a   Lange, Michael D ^b   Tsai, Roger ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON MOBILITY; ENERGY GAP; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

DOPANTS; MICROWAVE NOISES; SHEET RESISTANCE; TRANSMISSION THERMOMETRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2342452543     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1667507     Document Type: Article

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