Sb-based HEMTs with InAlSb/InAs heterojunction

Electronics Letters

Volumn 41, Issue 19, 2005, Pages 1088-1089

  Papanicolaou, N A ^a   Bennett, B R ^a   Boos, J B ^a   Park, D ^a   Bass, R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DC POWER TRANSMISSION; HETEROJUNCTIONS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

DC TRANSCONDUCTANCE; GATE LENGTHS; HALL MOBILITY; SHEET DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 25444526682     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052105     Document Type: Article

References (6)

1. Hacker, J.B., Bergman, J., Nagy, G., Sullivan, G., Kadow, C., Lin, H.K., Gossard, A.C., Rodwell, M., and Brar, B.: 'An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier', IEEE Microw. Wirel. Compon. Lett., 2004, 14, (4), pp. 156-158
2. Tsai, R., Barsky, M., Boos, J.B., Bennett, B.R., Lee, J., Papanicolaou, N.A., Magno, R., Namba, C., Liu, P.H., Park, D., Grundbacher, R., and Gutierrez, A.: 'Metamorphic AlSb/AlSb HEMT for low-power, high-speed electronics'. GaAs Integrated Circuit Symp. Tech. Dig., 2003, pp. 294-297
3. Deal, W.R., Tsai, R., Lange, M.D., Boos, J.B., Bennett, B.R., and Gutierrez, A.: 'A W-band InAs/AlSb low-noise/low-power amplifier', IEEE Microw. Wirel. Compon. Lett., 2005, 15, (4), pp. 208-210
4. Boos, J.B., Bennett, B.R., Kruppa, W., Park, D., Mittereder, J., Bass, R., and Twigg, M.E.: 'Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation', J. Vac. Sci. Technol. B, 1999, 17, (3), pp. 1022-1027
5. Bennett, B.R., Tinkham, B.P., Boos, J.B., Lange, M.D., and Tsai, R.: 'Materials growth for InAs high electron mobility transistors and circuits', J. Vac. Sci. Technol. B, 2004, 22, (2), pp. 688-694
6. +-InAs-InAlAs recess gate technology for InAs-channel millimeterwave HFETs', IEEE Trans. Electron Devices, 2005, 52, (2), pp. 151-158