Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1193-1195

  Bennett, Brian R ^a   Yang, M J ^a   Shanabrook, B V ^a   Boos, J B ^a   Park, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012701583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121010     Document Type: Article

References (19)

1. Z. Dobrovolskis, K. Grigoras, and A. Krotkus, Appl. Phys. A: Solids Surf. 48, 245 (1989).
2. C. R. Bolognesi, E. J. Caine, and H. Kroemer, IEEE Electron Device Lett. 15, 16 (1994).
3. J. B. Boos, W. Kruppa, D. Park, B. R. Bennett, and R. Bass, Proceedings of the Ninth International Conference IPRM (Proc. IEEE Piscataway, NJ, 1997), pp. 193-196.
4. C. Nguyen, B. Brar, and H. Kroemer, J. Vac. Sci. Technol. B 11, 1706 (1993).
5. G. Tuttle, H. Kroemer, and J. H. English, J. Appl. Phys. 67, 3032 (1990).
6. J. B. Boos, W. Kruppa, D. Park, B. V. Shanabrook, and B. R. Bennett, Electron. Lett. 30, 1983 (1994).
7. R. Venkatasubramanian, D. L. Dorsey, and K. Mahalingam, J. Cryst. Growth 175/176, 224 (1997).
8. J. D. Werking, C. R. Bolognesi, L.-D. Chang, C. Nguyen, E. L. Hu, and H. Kroemer, IEEE Electron Device Lett. 13, 164 (1992).
9. T. A. Malik, S. J. Chung, R. A. Stradling, W. T. Yuen, J. J. Harris, and A. G. Norman, Inst. Phys. Conf. Ser. 144, 229 (1995).
10. M. Kudo and T. Mishima, J. Cryst. Growth 175/176, 844 (1997).
11. C. R. Bolognesi, J. E. Bryce, and D. H. Chow, Appl. Phys. Lett. 69, 3531 (1996).
12. S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, and M. Inoue, Jpn. J. Appl. Phys., Part 1 36, 1869 (1997).
13. B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, Appl. Phys. Lett. 61, 2338 (1992).
14. B. R. Bennett, B. V. Shanabrook, and E. R. Glaser, Appl. Phys. Lett. 65, 598 (1994).
15. The Si-doped InAs layer was 4 ML or 12.1 Å thick. If the InSb-like interface bonds are considered, the total thickness of the InAs layer is 5 ML.
16. Y. B. Li, R. A. Stradling, T. Knight, J. R. Birch, R. H. Thomas, C. C. Phillips, and I. T. Ferguson, Semicond. Sci. Technol. 8, 101 (1993).
17. 2 for InAs caps. Based upon the self-consistent potentials, we expect the surface contribution to be substantially reduced for samples with an InAs(Si) donor layer.
18. P. J. Lin-Chung and M. J. Yang, Phys. Rev. B 48, 5338 (1993).
19. Y. Zhao, M. J. Jurkovic, and W. I. Wang, IEEE Trans. Electron Devices 45, 341 (1998).