InAsAlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2581-2585

  Lange, M D ^a   Tsai, R S ^a   Deal, W R ^a   Nam, P S ^a   Lee, L J ^a   Sandhu, R S ^a   Hsing, R ^a   Poust, B D ^a   Kraus, J L ^a   Gutierrez Aitken, A L ^a   Bennett, B R ^b   Boos, J B ^b   Noori, A M ^c   Hayashi, S L ^c   Goorsky, M S ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BAND STRUCTURE; ENERGY DISSIPATION; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; RESEARCH AND DEVELOPMENT MANAGEMENT; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON MOBILITY TRANSISTORS; ELECTRON SHEET; LOW NOISE AMPLIFIER; LOW POWER APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33845256851     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2362758     Document Type: Article

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