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Volumn 101, Issue 5, 2007, Pages

Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

(9) Zhang, X a Ha, S a Hanlumnyang, Y a Chou, C H a Rodriguez, V a Skowronski, M a Sumakeris, J J b Paisley, M J b O'Loughlin, M J b

a CARNEGIE MELLON UNIVERSITY (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; TOPOGRAPHY;

CIRCULAR LOOP DISLOCATIONS; CURVED DISLOCATIONS; INTERFACIAL DISLOCATIONS; MICROPIPES;

SILICON CARBIDE;

EID: 33947324502 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2437585 Document Type: Article

Times cited : (42)

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