Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 29-35

  Muller St G ^a   Sumakeris, J J ^a   Brady, M F ^a   Glass, R C ^a   Hobgood, H Mc D ^a   Jenny, J R ^a   Leonard, R ^a   Malta, D P ^a   Paisley, M J ^a   Powell, A R ^a   Tsvetkov, V F ^a   Allen, S T ^a   Das, M K ^a   Palmour, J W ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DIODES; EPITAXIAL GROWTH; MESFET DEVICES; MICROSTRUCTURE; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON WAFERS; SUBSTRATES;

DEFECTS AND IMPURITIES IN CRYSTALS; GROWTH FROM VAPORS; HIGH PURITY SEMI-INSULATING (HPSI) BULK CRYSTALS; POWER ADDED EFFICIENCY (PAE);

SILICON CARBIDE;

EID: 10344252283     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004085     Document Type: Conference Paper

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