Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers

Journal of Crystal Growth

Volumn 256, Issue 3-4, 2003, Pages 276-282

  Jacobson, H ^a   Yakimova, R ^a   Syvajarvi M ^a   Kakanakova Georgieva, A ^a   Tuomi, T ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AALTO UNIVERSITY   (Finland)

Author keywords

A1. Epilayers; A1. Synchrotron white beam X ray topography; A1. X ray diffraction; A3. Liquid phase epitaxy; B1. SiC

Indexed keywords

DISLOCATIONS (CRYSTALS); MICROSCOPES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; STACKING FAULTS; SUBLIMATION; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS;

LIQUID PHASE EPITAXY;

EID: 0043246625     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01337-X     Document Type: Article

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