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Volumn 433-436, Issue , 2003, Pages 907-912
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Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
a,b,c a,b d e |
Author keywords
Degradation; Dislocations; Electronic Polarization; Quantum Wells; Stacking Faults
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Indexed keywords
DISLOCATIONS (CRYSTALS);
ELECTRONIC STRUCTURE;
ENERGY GAP;
INCLUSIONS;
POLARIZATION;
SEMICONDUCTOR QUANTUM WELLS;
SILICON CARBIDE;
STACKING FAULTS;
ELECTRONIC POLARIZATION;
BIPOLAR SEMICONDUCTOR DEVICES;
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EID: 0242580956
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.907 Document Type: Conference Paper |
Times cited : (3)
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References (13)
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