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Volumn 433-436, Issue , 2003, Pages 907-912

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

Author keywords

Degradation; Dislocations; Electronic Polarization; Quantum Wells; Stacking Faults

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; ENERGY GAP; INCLUSIONS; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; STACKING FAULTS;

EID: 0242580956     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.907     Document Type: Conference Paper
Times cited : (3)

References (13)
  • 9
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    • F. Bechstedt, P. Käckel, A. Zywietz, K. Karch, B. Adolph, K. Tenelsen and J. Furthmüller, Phys. Status Solidi b 202 (1997), p. 35; F. Bechstedt and P. Käckel, Phys. Rev. Lett. 75 (1995), p. 2180.
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 2180
    • Bechstedt, F.1    Käckel, P.2
  • 12
    • 0037122091 scopus 로고    scopus 로고
    • in press
    • H. Iwata, U. Lindefelt, S. Öberg and P. R. Briddon, J. Phys.: Condens. Matter 14 (2002), p. 12733; J. Appl. Phys. (2003), in press.
    • (2003) J. Appl. Phys.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.