Growth and characterization of the 4H-SiC epilayers on substrates with different off-cut directions

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 229-232

  Tsuchida, H ^a   Kamata, I ^a   Izumi, S ^a   Tawara, T ^a   Izumi, K ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

Carrier lifetime; Dislocation; Epitaxial growth; Off cut direction

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIODES; EPITAXIAL GROWTH; HYDROGEN; MORPHOLOGY; STACKING FAULTS;

CARRIER LIFETIME; DISLOCATION; MATERIAL QUALITY; OFF-CUT DIRECTION;

SILICON CARBIDE;

EID: 8744287541     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.229     Document Type: Conference Paper

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