Effect of charge on the movement of dislocations in SiC

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Eberlein, T A G ^a   Jones, R ^a   Blumenau, A T ^b   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CORE STRUCTURES; DEEP FILLED BAND; FORWARD-BIASED OPERATION; SIC BIPOLAR DEVICES;

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; SILICON CARBIDE;

BIPOLAR INTEGRATED CIRCUITS;

EID: 33644514990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179115     Document Type: Article

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