Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 75, Issue 6, 1997, Pages 1461-1515

  Jain, S C ^a,c   Harker, A H ^b,d   Cowley, R A ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c IMEC   (Belgium)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031158796     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619708223740     Document Type: Article

References (146)

1. Jain, S. C., and Hayes, W., 1991, Semicond. Sei. Technol., 6, 547.
2. Sze, S. M. (editor), 1990, High Speed Semiconductor Devices (New York: Wiley Interscience).
3. Morgan, D. V., and Williams, R. H. (editors), 1991, Physics and Technology of Semiconductor Heterojunction Devices (London: Peregrinus).
4. Kasper, E., and Schäffler, F., 1991, Semiconductors and Semimetals, Vol. 33, edited by T. P. Pearsall (London: Academic Press), pp. 223-309.
5. Jain, S. C., 1994, Germanium-Silicon Strained Layers and Heterostructures (Boston: Academic Press).
6. Fu, Y., Jain, S. C., Willander, M., and Loferski, J. J., 1993, J. appl. Phys., 74, 402.
7. Jain, S. C., Iyer, S. S., and Loferski, J. J., 1992, A VS Topical Conference, 9-13November, Chicago, poster paper.
8. Jain, S. C., Poortmans, J., Iyer, S. S., Loferski, J. J., Nus, J., Mertens, R., and van Overstraeten, R., 1993, IEEE Trans. Electron. Devices, 40, 2338.
9. Bean, J. C., 1992, Proc. IEEE, 80, 571.
10. People, R., 1986, IEEE J. Quantum Electron., QE 22, 1696.
11. People, R., and Bean, J. C., 1986, Appl. Phys. Lett., 48, 1338.
12. Schäffler, F., Többen, D., Herzog, H.-J., Abstreiter, G., and Holländer, B., 1992, Semicond. Sei. Technol., 7, 260.
13. Patton, G. L., Comfort, J. H., Meyerson, B. S., Crabbé, E. F., Scilla, G. J., de Fresart, E., Stork, J. M. C., Sun, J. Y. C., Harame, D. L., and Burghartz, J. N., 1990, IEEE Electron. Device Lett., 11, 171.
14. Gruhle, A., Kibbel, H., Erben, U. and Kasper, E., 1993, Electron. Lett., 29, 415.
15. Tsaur, B.-Y., Chen, C. K., and Marino, S. A., 1991, IEEE Electron. Device Lett., 12, 293.
16. Garone, P. M., Venkataraman, V., and Sturm, J. C., 1992, IEEE Electron. Device Lett., 13, 56.
17. Osbourn, G. C., 1986, IEEE J. Quantum Electron., QE-22, 1677.
18. Adachi, S., 1992, Physical Properties of II1-V Semiconductor Compounds (New York: Wiley).
19. Adams, A., and O’Reilly, E., 1992, Phys. World, 5 (October), 43.
20. York, P. K., Beernink, K. J., Fernandez, G. E., and Coleman, J. J., 1990, Semicond. Sei. Technol., 5, 508.
21. Chand, N., Becker, E. E., van der Ziel, J. P., Chu, S. N. G., and Dutta, N. K., 1991, Appl. Phys. Lett., 58, 1704.
22. Morkoc, H., Sverdlov, B., and Gao, G.-B., 1993, Proc. IEEE, 81, 493.
23. Gunshor, R. L., Otsuka, N., and Nurmikko, A. V., 1993, IEEE Spectrum, 30, 28.
24. Hasse, M. A., Qui, J., DePuydt, J. M., and Cheng, H., 1991, Appl. Phys. Lett., 57, 1272
25. [24]Ren, J., Bowers, K., Sheed, B., Dreifus, D. L., Cook, Jr, J. W., Schetsina, J. F., and Kolbas, R. M., 1990, Appl. Phys. Lett., 57, 1901.
26. Jeon, H., Ding, J., Patterson, W., Nurmiko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., and Gunshor, R. L., 1991, Appl. Phys. Lett., 59, 3619.
27. Glass, A. M., Tai, K., Bylsma, R. B., Feldman, R. D., Olson, D. H., and Austin, R. F., 1988, Appl. Phvs. Lett., 53, 834.
28. Baibich, M. N., Broto, J. M., Fert, A., Nguyen Van Dau, F., Petroff, F., Etienne, P., Creuzet, G., Friederich, A., and Chazelas, J., 1988, Phvs. Rev. Lett., 61, 2472.
29. Barnett, S. A., 1993, Physics in Thin Films, edited by M. H. Francombe and J. L. Vossen (New York: Academic Press), chapter 1.
30. Bak, P., and Emery, V. J., 1976, Phvs. Rev. Lett., 36, 978.
31. Shockley, W., 25 September 1951, US Patent 2569347.
32. Kroemer, H., 1957, Proc. IRE, 45, 1535.
33. Kroemer, H., 1982, Proc. IEEE, 70, 13.
34. Tiwari, A., and Frank, D. J., 1992, Appl. Phvs. Lett., 60, 630.
35. Shur, M., 1990, Physics of Semiconductor Devices (Englewood Cliffs, NJ: Prentice Hall), pp. 632-633.
36. Frank, F. C., and Van der Merwe, J., 1949, Proc. R. Soc. (Lond.), A 198, 216.
37. Ball, C. A. B., and Van der Merwe, J. H., 1983, Dislocations in Solids, edited by F. R. N. Nabarro (Amsterdam: North Holland), chapter 27, pp. 122 -141.
38. Nagai, H., 1974, J. appl. Phys., 45, 3789.
39. Kasper, E., Herzog, H. J., and Kibbel, H., 1975, Appl. Phvs., 8, 199.
40. Kasper, E., and Herzog, H. J., 1977, Thin Solid Films, 44, 357.
41. Jain, S. C., Bullough, R., and Willis, J., 1990, Adv. Phys., 39, 127.
42. Matthews, J. W., 1975, Epitaxial Growth, Part B, edited by J. W. Matthews (New York: Academic Press), pp. 559-609.
43. Matthews, J. W., 1975, J. Vac. Sci. Technol., 12, 126.
44. Jain, S. C., 1989, Proceedings of the Fifth International Workshop on the Physics of Semiconductor Devices, edited by W. S. Khokle and S. C. Jain (Delhi: Macmillan), pp. 3-12.
45. Jain, S. C., Gosling, T. J., Willis, J. R., Totterdell, D. H. J., and Bullough, R., 1992, Phil. Mag. A, 65, 1151.
46. Jain, U., Jain, S. C., Nijs, J., Willis, J. R., Bullough, R., Mertens, R., and Van Overstraeten, R., 1993, Solid-State Electron., 36, 331.
47. Willis, J. R., Jain, S. C., and Bullough, R., 1990, Phil. Mag. A, 62, 115.
48. LeGoues, F. K., Horn-Von Hoegen, M., Copel, M., and Tromp, R. M., 1991, Phvs. Rev. B, 44, 12 894.
49. Price, G. L., 1991, Phys. Rev. Lett., 66, 469.
50. Jain, S. C., Gosling, T. J., Willis, J. R., Bullough, R., and Balk, P., 1992, Solid-State Electron., 35, 1073.
51. Willis, J. R., Jain, S. C., and Bullough, R., 1991, Phil. Mag. A, 64, 629.
52. Gosling, T. J., Bullough, R., Jain, S. C., and Willis, J. R., 1993, J. appl Phvs., 73, 8267.
53. Atkinson, A., and Jain, S. C., 1992, J. appl. Phys., 72, 2242.
54. Atkinson, A., and Jain, S. C., 1992, Thin Solid Films, 222, 161.
55. Atkinson, A., and Jain, S. C., 1993, J. Phys.: condens. Matter, 5, 4595.
56. Jain, U., Jain, S. C., Atkinson, A., Nijs, J., Mertens, R., and Van Overstraeten, R., 1993, J. appl. Phys., 73, 1773.
57. Rockett, A., and Kiely, C. J., 1991, Phvs. Rev. B, 44, 1154.
58. Fritz, I. J., 1987, Appl. Phys. Lett., 51, 1080.
59. Fritz, I. J., 1987, Appl. Phys. Lett., 51, 1004.
60. Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., and Halliweli, M. A. G., 1990, Appl. Phys. Lett., 56, 460.
61. Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., and Halliwell, M. A. G., 1989, Thin Solid Films, 183, 171.
62. Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A., and Vallin, J. T., 1987, Appl. Phys. Lett., 51, 752.
63. Matthews, J. W., and Blakeslee, A. E., 1974, J. Cryst. Growth, 27, 118.
64. Jain, S. C., Balk, P., Goorsky, M. S., and Iyer, S. S., 1991, Microelectron. Engng, 15, 131.
65. Payne, A. P., Nix, W. D., Lairson, B. M., and Clemens, B. M., 1993, Phys. Rev., 47, 13 730.
66. Eaglesham, D. J., Gossmann, H.-J., and Cerullo, M., 1990, Mater. Res. Soc. Symp. Proc., Vol. 198 (Pittsburgh, Pennsylvania: Materials Research Society), pp. 51-56.
67. Williams, A. A., Thornton, J. M. C., Macdonald, J. E., van Silfhout, R. G., van der Veen, J. F., Finney, M. S., Johnson, A. D., and Norris, C., 1991, Phys. Rev. B, 43, 5001.
68. Houghton, D. C., 1991, J. appl. Phys., 70, 2136.
69. Tuppen, C. G., and Gibbings, C. J., 1990, J. appl. Phys., 68, 1526.
70. Hull, R., Bean, J. C., Bahnck, D., Peticolas, Jr, L. J., Short, K. T., and Unterwald, F. C., 1991, J. appl. Phys., 70, 2052.
71. Hull, R., and Bean, J. C., 1989, J. Vac. Sci. Technol. A, 7, 2580.
72. Eaglesham, D. J., Kvam, E. P., Maher, D. M., Humphreys, C. J., and Bean, J. C., 1989, Phil. Mag. A, 59, 1059.
73. Gosling, T. J., Jain, S. C., and Harker, A. H., 1994, Phys. Stat. sol. (a), 146, 713.
74. Dodson, B. W., 1988, Heteroepitaxy on Silicon: Fundamentals, Structure and Devices, Vol. 116, edited by H. K. Choi, R. Hull, H. Ishiwara and R. H. Nemanich (Pittsburgh, Pennsylvania: Materials Research Society), pp. 491-503.
75. Houghton, D. C., 1990, Appl. Phys. Lett., 57, 1434.
76. Houghton, D. C., 1990, Appl. Phys. Lett., 57, 2124.
77. Freund, L. B., and Hull, R., 1992, J. appl. Phys., 71, 2054.
78. Hirth, J. P., and Lothe, J., 1968, Theory of Dislocations (New York: McGraw-Hill).
79. Louchet, F., Cochet Muchy, D., and Brechet, Y., 1988, Phil. Mag. A, 57, 327.
80. Louchet, F., 1981, Institute of Physics Conference Series, No. 60 (Bristol: Institute of Physics), pp. 35-38.
81. Sumino, K., and Yonenaga, I., 1991, Solid State Phenomena, 19-20, 295.
82. Bonar, J. M., Hull, R., Walker, J. F., and Malik, R., 1992, Appl. Phys. Lett., 60, 13 279.
83. Paine, D., Howard, D. J., Sacks, D. R. N., and Eschrich, T. C., 1990, Mater. Res. Soc. Symp. Proc., Vol. 160 (Pittsburgh, Pennsylvania: Materials Research Society), pp. 123-128.
84. Perovic, D. D., and Houghton, D. C., 1992, Mechanisms of Heteroépitaxial Growth, Mater. Res. Soc. Symp. Proc., Vol. 263, edited by M. F. Chisholm, B. J. Garrison, R. Hull and L. J. Schowalter, (Pittsburgh, Pennsylvania: Materials Research Society), pp. 391-402.
85. Fitzgerald, E. A., Watson, G. P., Proano, R. E., and Ast, D. G., 1989, J. appl. Phys., 65, 2220.
86. Tuppen, C. G., Gibbings, C. J., Hockly, M., and Roberts, S. G., 1990, Appl. Phys. Lett., 56, 54.
87. Higgs, V., Kightley, P., Goodhew, P. J., and Augustus, P. D., 1991, Appl. Phys. Lett., 59, 829.
88. Hull, R., Bean, J. C., Bahnck, D., Bonar, J. M., and Peticolas, L. J., 1991, Proceedings of the Microscopy and Semiconductor Materials Conference, Institute of Physics Conference Series No. 117 (Bristol: Institute of Physics), pp. 497-508.
89. Hull, R., Bean, J. C., and Buescher, C., 1989, J. appl. Phys., 66, 5837.
90. LeGoues, F. K., Mooney, P. M., and Chu, J. O., 1993, Appl. Phys. Lett., 62, 140.
91. Nix, W. D., Noble, D. B., and Turlo, J. F., 1990, Mechanism and kinetics of misfit dislocation formation in heteroépitaxial thin films. Materials Research Society 1990 Spring Meeting, 16-21 April, San Francisco, California (Pittsburgh, Pennsylvania: Materials Research Society).
92. LeGoues, F. K., Ott, J. A., Eberl, K., and Iyer, S. S., 1992, Appl. Phys. Lett., 61,174.
93. Kamat, S. V., and Hirth, J. P., 1990, J. appl. Phys., 67, 6844.
94. Hagen, W., and Strunk, H., 1978, Appl. Phys., 17, 85.
95. Lefebvre, A., Herbeaux, C., Bouillet, C., and Di Persio, J., 1991, Phil. Mag. Lett., 63, 23.
96. Freund, L. B., 1990, J. appl. Phys., 68, 2073.
97. Alexander, H., and Haasan, P., 1968, Solid State Physics, Vol. 22, edited by F. Seitz, D. Turnbull, and H. Ehrenreich (New York: Academic Press), pp. 27-158.
98. Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., and Robinson, I. K., 1984, J. Vac. Sci. Technol., A2, 436.
99. Jesser, W. A., and Matthews, J. W., 1968, Phil. Mag., 17, 461.
100. Fartosh, A., Grimsditch, M., Fullerton, E. E., and Schuller, I. K., 1993, Plus. Rev. B, 47, 12 813, and references therein.
101. Sonntag, P., Donner, W., Metoki, N., and Zabel, H., 1994, Phys. Rev. B, 49, 2869.
102. Speck, J. S., and Pompe, W., 1994, J. appl. Phys., 76, 466.
103. Speck, J. S., Seifert, A., Pompe, W., and Ramesh, R., 1994, J. appl. Phys., 76, 477.
104. Pompe, W., Gong, X., Suo, Z., and Speck, J. S., 1993, J. appl. Phys., 74, 6012.
105. Mochrie, S. G. J., Gibbs, D., and Zehnkr, D. M., 1992, Materials Interfaces: Atomic-Level Structure and Properties, edited by D. Wolf and S. Yip (London: Chapman and Hall), p. 336.
106. McMillan, W. L., 1976, Phys. Rev. B, 14, 1496.
107. Pokrovsky, V. L., and Talapov, A. L., 1979, Phys. Rev. Lett., 42, 65.
108. Fisher, M. E., and Fisher, D. S., 1982, Phys. Rev. B, 25, 3192.
109. Erbil, A., Kortan, A. R., Birgeneau, R. J., and Dresselhaus, M. S., 1983, Pin s. Rev. B, 28, 6329.
110. Mochrie, S. G. J., Kortan, A. R., Birgeneau, R. J., and Horn, P. M., 1985, Z. Pin s. B, 62, 79.
111. Stephens, P. W., Heiney, P., Birgeneau, R. J., and Horn, P. M., 1979, Phys. Rev. Lett., 43, 47.
112. Stephens, P. W., Heiney, P. A., Birgeneau, R. J., Horn, P. M., Moncton, D. E., and Brown, G. S., 1984, Phys. Rev. B, 29, 3512.
113. Coppersmith, S.N., Fisher, D.S., Halperin, B. I., Lee, P. A., and Brinkman, W.F., 1982, Phys. Rev. B, 25, 349.
114. Kosterlitz, J. M., and Thouless, D. J., 1972, J. Phys. C. 5, L124.
115. Nelson, D. R., 1978, Phys. Rev. B, 18, 2318.
116. Nelson, D. R., and Halperin, B. L, 1979, Phys. Rev. B, 19, 2457.
117. Heiney, P. A., Stephens, P. W., Birgeneau, R. J., Horn, P. M., and Moncton, D. E., 1983, Phys. Rev. B, 28, 6416.
118. Pindak, R., Moncton, D. E., Davey, S. C., and Goodby, J. W., 1981, Phys. Rev. Lett., 46, 1135.
119. Novaco, A. D., and McTague, J. P., 1977, Phys. Rev. Lett., 38, 1286.
120. Shaw, C. G., Fain, Jr, S. C., and Chinn, M. D., 1978, Phvs. Rev. Lett., 41, 955.
121. Shiba, H., 1979, J. Phvs. Soc. Japan, 46, 1852.
122. Shiba, H., 1980, J. Phys. Soc. Japan, 48, 211.
123. For a review see Blinc, R., and Levanyuk, A. P., 1986, Incommensurate Phases in Dielectrics, Vol. 1 and 2 (Amsterdam: North Holland).
124. Bruce, A. D., Cowley, R. A., and Murray, A. F., 1978, J. Phys. C, 11, 3591.
125. Bruce, A. D., and Cowley, R. A., 1978, J. Phvs. C, 11, 3609.
126. Pokrovskiĭ, V. L., and Talapov, A. L., 1978, Sov. Phys. JETP, 48, 579
127. P Pokrovskiĭ, V. L., and Talapov, A. L., 1978, Zh. Eksp. Teor. Fiz., 75, 1151.
128. Aubry, S., 1983, J. Phys. C 16, 2497.
129. Chou, W., and Griffiths, R. B., 1986, Phys. Rev. B, 34, 6219.
130. Bak, P., 1982, Rep. Progr. Phys., 45, 587.
131. Fisher, M. E., and Selke, W., 1980, Phys. Rev. Lett., 44, 1502.
132. Selke, W., 1992, Spatially modulated structures in systems with competing interactions. Phase Transitions and Critical Phenomena, Vol. 15, edited by C. Domb and J. L. Lebowitz (New York: Academic).
133. Bak, P., 1979, Soldons and Condensed Matter Physics, Proceedings of the Symposium on Nonlinear (Soliton) Structure and Dynamics in Condensed Matter, Oxford, 22-28 June 1978, edited by A. R. Bishop and T. Schneider (Berlin: Springer), p. 216.
134. Nattermann, T., 1983, J. Phys. C, 16, 4125.
135. Cowley, R. A., 1980, Adv. Phys., 29, 1.
136. Blinc, R., Rutar, V., Topic, B., Zumer, S., Seliger, I. P., Aleksandrova, I. P., and Milia, F., 1986. J. Phys. C, 19, 3421.
137. Mashiyama, J., Tanisaki, S., and Hamano, K., 1982, J. Phys. Soc. Japan, 51, 2538.
138. Andrews, S. R., and Mashiyama, H., 1983, J. Phys. C, 16, 4985.
139. Bestgen, H., 1986, Solid State Commun., 58, 197.
140. Moudden, A. H., Moncton, D. E., and Axe, J. D., 1980, Phys. Rev. Lett., 51, 2390.
141. Yeomans, J., 1988, Solid State Physics, Vol. 41, edited by F. Seitz, D. Turnbull, and H. Ehrenreich (New York: Academic Press), p. 151.
142. Gibbs, D., Moncton, D. E., D’Amico, K. L., Bohr, J., and Grier, B. H., 1985, Phys. Rev. Lett., 55, 234.
143. Cowley, R. A., and Bates, S., 1988, J. Phys. C, 21, 4113.
144. Cowley, R. A., and Jensen, J., 1992, J. Phys.: condens. Mater., 4, 9673.
145. Cowley, R. A., Jehan, D. A., McMorrow, D. F., and McIntyre, G. J., 1991, Phys. Rev. Lett., 66, 1521.
146. Rossat-Mignod, J., Burlet, P., Bartholin, H., Vogt, O., and Lagnier, R., 1980, J. Phys. C, 13, 6381.