Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 41-44

  Chan, C T ^a   Tang', C J ^a   Kuo, C H ^a   Ma, H C ^a   Tsai, C W ^b   Wang, H C H ^b   Chi, M H ^b   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

HfSiON; High k gate dielectric; Single electron emission; Thermally assisted tunneling; Traps

Indexed keywords

HFSION; HIGH-K GATE DIELECTRIC; SINGLE ELECTRON EMISSION; THERMALLY-ASSISTED TUNNELING; TRAPS;

ACTIVATION ENERGY; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON EMISSION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 28744436722     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. H. Iwai, S. Ohmi, S. Akama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama, and Y. Yoshihara, "Advanced Gate Dielectric Materials for Sub-100nm CMOS," in proceedings of International Electron Device Meeting, 2002, pp. 625-628.
2. H. C.-H. Wang, S.-J. Chen, M.-F. Wang, P.-Y. Tsai, C. W. Tsai, T.-W. Wang, S. M. Ting, T.-H. Hou, P.-S. Lim, H.-J. Lin, Y. Jin, H.-J. Tao, S.-C. Chen, C. H. Diaz, M.-S. Liang, and C. Hu, "Low Power Device Technology with SiGe Channel, HfSiON, and Poly-Si Gate," in proceedings of International Electron Device Meeting, 2004, pp. 161-164.
3. 2 Reliability and Yield," in proceedings of International Electron Device Meeting, 2003, pp. 935-938.
4. R. R. Hearing, and E. N. Adams, "Theory and Application of Thermally Stimulated Current in Photoconductors," Physical Review, Vol. 117, NO. 2, pp. 451-454, 1960
5. K. A. Nasyrov, V. A. Gritsenko, M. K. Kim, H. S. Chae, S. D. Chae, W. I. Ryu, J. H. Sok, J.-W. Lee, and B. M. Kim, "Charge Transport Mechanism in Metal-Nitride-Oxide-Silicon Structures," IEEE Electron Device Letter, Vol. 25, NO. 6, pp. 336-338, 2002.
6. O. K. Lui, and P. Migliorato, "A New GenerationRecombination Model for Device Simulation Including the Poole-Frenkel Effect and Phonon-Assisted Tunneling," Solid State Electronics, Vol. 41, pp. 575-583, 1997.
7. 2 and HfAlO Gate Stacks," in proceedings of International Electron Device Meeting, 2002, pp. 731-734.
8. M.-H. Tsai, T. P. Ma, and T. R. Hook, "Channel Length Dependence of Random Telegraph Signal in Sub-Micron MOSFET's," IEEE Electron Device Letter, Vol. 15, NO. 12, pp. 504-506, 1994.