ALD HfO2 using Heavy Water (D2O) for Improved MOSFET Stability

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 83-86

  Tseng, H H ^a   Ramon M E ^a   Hebert, L ^a   Tobin, P J ^a   Triyoso, D ^a   Grant, J M ^a   Jiang, Z X ^a   Roan, D ^a   Samavedam, S B ^a   Gilmer, D C ^a   Kalpat, S ^a   Hobbs, C ^a   Taylor, W J ^a   Adetutu, O ^a   White, B E ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; HEAVY WATER; SYSTEM STABILITY; THICKNESS CONTROL; THRESHOLD VOLTAGE;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRIC PROCESSING;

MOSFET DEVICES;

EID: 0842266673     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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