Electrically active interface defects in the (100)Si/SiO x/HfO2/TiN system: Origin, instabilities and passivation

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 97-110

  Hurley, P K ^a   Cherkaoui, K ^a   Groenland, A W ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DENSITY (SPECIFIC GRAVITY); ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); PASSIVATION;

ELECTRICALLY ACTIVE INTERFACE DEFECTS; HIGH INTERFACE STATE DENSITIES; INTERFACE STATE PASSIVATION; METAL GATE CAPACITORS;

SILICON COMPOUNDS;

EID: 33846995963     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355702     Document Type: Conference Paper

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