Interface states in HFO2 stacks with metal gate: Nature, passivation, generation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 55-60

  Garros, X ^a   Reimbold, G ^a   Duret, D ^a   Leroux, C ^a   Guillaumot, B ^a,b   Louveau, O ^a,b   Hobbs, C ^c   Martin, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c Freescale Semiconductors   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HFO2 STACKS; INTERFACE DEFECTS; METAL GATES; PLASMA ANNEALING;

ANNEALING; CAPACITORS; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PASSIVATION; PLASMA APPLICATIONS; SILICA;

GATES (TRANSISTOR);

EID: 28744457441     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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