Influence of pre-deposition treatments on the interfacial and electrical characteristics of ZrO2 gate dielectrics

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3724-3729

  Chen, Li Min ^a   Lai, Yi Sheng ^b   Chen, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

Transmission electron microscopy (TEM); X ray photoelectron spectroscopy; Zirconium oxide

Indexed keywords

DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

AMORPHOUS MATRIX; REACTIVE SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROMETRY;

DIELECTRIC MATERIALS;

EID: 33846939809     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.012     Document Type: Article

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