Growth and electrical properties of atomic-layer deposited ZrO 2/Si-nitride stack gate dielectrics

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 536-542

  Ishii, Hiroyuki ^a   Nakajima, Anri ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MOSFET DEVICES; SILICON; SILICON NITRIDE; VAPOR PRESSURE; ZIRCONIUM COMPOUNDS;

ATOMIC-LAYERS; STACK DIELECTRICS;

THIN FILMS;

EID: 0742320702     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629773     Document Type: Article

References (29)

1. Y. Oshita, A. Ogura, A. Hoshino, T. Suzuki, S. Hiiro, and H. Machida, J. Cryst. Growth 235, 365 (2002).
2. Y. Oshita, A. Ogura, A. Hoshino, S. Hiiro, and H. Machida, J. Cryst. Growth 220, 604 (2000).
3. H. Ikeda, S. Goto, K. Honda, M. Sakashita, A. Sakai, S. Zaima, and Y. Yasuda, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, (Tokyo Business Center fo Academic Societies, Tokyo, 2001), p. 498.
4. Y.-Z. Hu and S.-P. Tay, J. Vac. Sci. Technol. B 19, 1706 (2001).
5. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
6. M. Balog, M. Schieber, M. Michman, and S. Patai, Thin Solid Films 47, 109 (1977).
7. W.-J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 1999, 145 (1999).
8. Y. Ma, Y. Ono, L. Stecker, D. R. Evans, and S. T. Hsu, Tech. Dig. - Int. Electron Devices Meet. 1999, 149 (1999).
9. T. S. Jeon, J. M. White, and D. L. Kwong, Appl. Phys. Lett. 78, 368 (2001).
10. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
11. Y. Morisaki, T. Aoyama, Y. Sugita, K. Irino, T. Sugii, and T. Nakamura, Tech. Dig. - Int. Electron Devices Meet. 2002, 861 (2002).
12. M. Koyama, K. Suguro, M. Yoshiki, Y. Kamimuta, M. Koike, M. Ohse, C. Hongo, and A. Nishiyama, Tech. Dig. - Int. Electron Devices Meet. 2001, 459 (2001).
13. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, Tech. Dig. - Int. Electron Devices Meet. 2001, 451 (2001).
14. A. Nakajima, T. Yoshimoto, T. Kidera, K. Obata, S. Yokoyama, H. Sunami, and M. Hirose, Appl. Phys. Lett. 77, 2855 (2000).
15. A. Nakajima, T. Yoshimoto, T. Kidera, K. Obata, S. Yokoyama, H. Sunami, and M. Hirose, J. Vac. Sci. Technol. B 19, 1138 (2001).
16. Q. D. M. Khosru, A. Nakajima, T. Yoshimoto, and S. Yokoyama, Appl. Phys. Lett. 79, 3488 (2001).
17. A. Nakajima, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 79, 665 (2001).
18. A. Nakajima, Q. D. M. Khosru, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 80, 1252 (2002).
19. C. M. Perkins, B. B. Triplett, P. C. McIntyre, K. C. Saraswat, S. Haukka, and M. Tuominen, Appl. Phys. Lett. 78, 2357 (2001).
20. K. Kukli, M. Ritala, and M. Leskelä, Chem. Vap. Deposition 6, 297 (2000).
21. A. Nakajima, T. Kidera, H. Ishii, and S. Yokoyama, Appl. Phys. Lett. 81, 2824 (2002).
22. C. Kittel, Introduction to Solid State Physics, 7th ed. (Wiley, New York, 1996), p. 78.
23. A. Nakajima and M. Ishigame, Solid State Ionics 146, 133 (2002).
24. M. A. Cameron and S. M. George, Thin Solid Films 348, 90 (1999).
25. S. Miyazaki, J. Vac. Sci. Technol. B 19, 2212 (2001).
26. S. Miyazaki, Appl. Surf. Sci. 190, 66 (2002).
27. T. Yoshida, D. Imafuku, J. L. Alay, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys., Part 2 34, L903 (1995).
28. W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, Tech. Dig. - Int. Electron Devices Meet. 2001, 463 (2001).
29. N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari (Business Center for Academic Societies, Tokyo, 1993), p. 847.