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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 772-778

Evolution of chemical bonding configuration in ultrathin SiOxNy layers grown by low-temperature plasma nitridation

(2) Lai, Yi Sheng a Chen, J S a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; NITRIDING; PLASMA APPLICATIONS; SURFACE STRUCTURE; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BINDING STRUCTURE; CHEMICAL BONDING CONFIGURATION; DEPOSITION RATE; LOW TEMPERATURE PLASMA NITRIDATION; ULTRATHIN LAYERS; ULTRATHIN SILICON OXYNITRIDE;

SILICON COMPOUNDS;

EID: 0038003042 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1570838 Document Type: Article

Times cited : (15)

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