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Volumn 482-485, Issue PART 1, 2001, Pages 272-278
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Influence of Si oxidation methods on the distribution of suboxides at Si/SiO2 interfaces and their band alignment: A synchrotron photoemission study
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Author keywords
Photoemission (total yield); Semiconductor insulator interfaces; Silicon; Silicon oxides
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Indexed keywords
PHOTOEMISSION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR METAL BOUNDARIES;
SILICA;
STOICHIOMETRY;
SURFACE STRUCTURE;
THERMOOXIDATION;
ELECTRON STIMULATED OXIDATION;
SYNCHROTRON PHOTOEMISSION;
INTERFACES (MATERIALS);
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EID: 0035918909
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)00817-2 Document Type: Conference Paper |
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Times cited : (19)
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References (28)
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