Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 524-528

  Maikap, S ^a,b   Lee, Je Hun ^a   Mahapatra, R ^a,c   Pal, Samik ^a,c   No, Y S ^a,d   Choi, Won Kook ^a,d   Ray, S K ^a,c   Kim, Doh Y ^a  

^a Seoul National University   (South Korea)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

CET; HfO2; High gate dielectric; Plasma nitridation

Indexed keywords

AMMONIA; AUGER ELECTRON SPECTROSCOPY; CONCENTRATION (PROCESS); ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; NITROGEN OXIDES; PHOSPHORUS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE EQUIVALENT THICKNESS (CET); HFO2; HIGH-K GATE DIELECTRICS; PLASMA NITRIDATION;

SURFACE TREATMENT;

EID: 13644264191     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.009     Document Type: Article

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