Effects of postannealing on the bulk and interfacial characteristics of ZrO2 gate dielectrics prepared on Si by metalorganic chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2702-2708

  Huang, Shih Sian ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SILICON; TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT-VOLTAGE; EQUIVALENT-OXIDE THICKNESS (EOT); GATE DIELECTRICS; POSTANNEALING;

ZIRCONIA;

EID: 13244297139     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1811627     Document Type: Article

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