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Journal of the Electrochemical Society

Volumn 149, Issue 6, 2002, Pages

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(Oi-Pr)2(thd)2 and O2

(7) Chen, H W a Huang, T Y a,b Landheer, D c Wu, X c Moisa, S c Sproule, G I c Chaob, T S a,b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPOSITION; DISSOLUTION; ELECTRIC PROPERTIES; HIGH RESOLUTION ELECTRON MICROSCOPY; ORGANOMETALLICS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

GATE INSULATORS; LIQUID INJECTION RATE; MOLECULAR OXYGEN; ZIRCONIUM SILICATE;

ELECTRIC INSULATORS;

EID: 0036608775 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1471891 Document Type: Article

Times cited : (21)

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