Low-temperature fabrication of ultrathin ZrO22/Si structure using metal deposition followed by oxygen annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 5-7

  Nagasato, Yoshitaka ^a   Aya, Tsutomu ^a   Iwazaki, Yoshitaka ^a   Hasumi, Masahiko ^a   Ueno, Tomo ^a   Kuroiwa, Koichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Equivalent oxide thickness; Gate dielectric; High k; Interfacial layer; Metal sputtering; Postoxidation; ZrO2

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLIZATION; DEGRADATION; ELECTRIC POTENTIAL; MOSFET DEVICES; PERMITTIVITY; SILICON; VLSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC; HIGH-K; INTERFACIAL LAYERS; METAL SPUTTERING; POSTOXIDATION; ZRO2;

ULTRATHIN FILMS;

EID: 15544374243     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.5     Document Type: Article

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